首页> 外文OA文献 >Sol-gel derived mesoporous Pt and Cr-doped WO(3) thin films: the role played by mesoporosity and metal doping in enhancing the gas sensing properties
【2h】

Sol-gel derived mesoporous Pt and Cr-doped WO(3) thin films: the role played by mesoporosity and metal doping in enhancing the gas sensing properties

机译:溶胶-凝胶衍生的中孔Pt和Cr掺杂的WO(3)薄膜:中孔性和金属掺杂在增强气体传感特性中所起的作用

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Mesoporous Cr or Pt-doped WO(3) thin films to be employed as ammonia gas sensors were prepared by a fast one-step sol-gel procedure, based on the use of triblock copolymer as templating agent. The obtained films were constituted by aggregates of interconnected WO(3) nanocrystals (20-50 nm) separated by mesopores with dimensions ranging between 2 and 15 nm. The doping metals, Pt and Cr, resulted differently hosted in the WO(3) mesoporous matrix. Chromium is homogeneously dispersed in the oxide matrix, mainly as Cr(III) and Cr(V) centers, as revealed by EPR spectroscopy; instead platinum segregated as Pt (0) nanoparticles (4 nm) mainly included inside the WO(3) nanocrystals. The semiconductor layers containing Pt nanoclusters revealed, upon exposure to NH(3), remarkable electrical responses, much higher than Cr-doped and undoped layers, particularly at low ammonia concentration (6.2 ppm). This behavior was attributed to the presence of Pt nanoparticles segregated inside the semiconductor matrix, which act as catalysts of the N-H bond cleavage, decreasing the activation barrier in the ammonia dissociation. The role of the mesoporous structure in influencing the chemisorption and the gas diffusion in the WO(3) matrix appeared less decisive than the electronic differences between the two examined doping metals. The overall results suggest that a careful combination between mesoporous architecture and metal doping can really promote the electrical response of WO(3) toward ammonia.
机译:基于三嵌段共聚物作为模板剂,通过快速的一步溶胶-凝胶法制备了用作氨气传感器的中孔Cr或Pt掺杂的WO(3)薄膜。所获得的膜是由相互连接的WO(3)纳米晶体(20-50 nm)的聚集体构成的,这些纳米晶体被介孔隔开,尺寸介于2至15 nm之间。掺杂金属Pt和Cr在WO(3)介孔基质中以不同的形式存在。 EPR光谱显示,铬均匀地分散在氧化物基质中,主要分布在Cr(III)和Cr(V)中心。相反,铂分离为Pt(0)纳米颗粒(4 nm),主要包含在WO(3)纳米晶体内部。包含Pt纳米团簇的半导体层在暴露于NH(3)时显示出显着的电响应,远高于Cr掺杂和未掺杂的层,特别是在低氨浓度(6.2 ppm)时。该行为归因于存在于半导体基质内部的Pt纳米颗粒的分离,Pt纳米颗粒充当N-H键断裂的催化剂,从而降低了氨离解中的活化势垒。中孔结构在影响化学吸附和气体扩散在WO(3)矩阵中的作用似乎没有决定性比这两个被检查的掺杂金属之间的电子差异。总体结果表明,介孔结构和金属掺杂之间的仔细结合可以真正促进WO(3)对氨的电响应。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号